Molecular dynamics simulations were performed to investigate the growth of hydrocarbon films with a surface at temperatures from 300 to 1000 K. The results show that C2H is the main precursor of film growth. The formed C:H films are mainly unsaturated and dominated by double bonds and CN3 carbon atoms. The evolution of the C:H film is considered under the bombardment of the two major ions (Ar+ and C2H3+ ) with energies ranging from 50 to 100 eV. Film sputtering is significant above 50 eV, while at lower energies, the atoms of the C2H3+ ions can be incorporated and contribute to the growth.